Title :
Development of sputtering technology of Ta2O5/TaOx stacked film for ReRAM mass-production
Author :
Fukuda, Nobuko ; Fukuju, Kazunori ; Nishioka, Y. ; Suu, Koukou
Author_Institution :
Inst. of Semicond. & Electron. Technol., ULVAC Inc., Shizuoka, Japan
Abstract :
This paper deals with development of sputtering technology of Ta2O5/TaOx stacked film for ReRAM mass-production. Thickness of TaOx film deposited by sputtering process is possible to obtain with good uniformity. However, if a high deposition rate is required for mass production, it is very difficult to obtain good controllability and uniformity of TaOx film. These problems affect the switching characteristics of the ReRAM. In order to solve these problems, sputtering tool and process for ReRAM mass-production are developed. We report the result of TaOx film with good resistance uniformity and controllability and deposition stability without low deposition rate. Moreover, switching characteristics of Pt/Ta2O5/TaOx/Pt-ReRAM-cells are evaluated.
Keywords :
electrical resistivity; mass production; random-access storage; sputter deposition; switching; tantalum compounds; thin films; Pt-Ta2O5-TaOx-Pt; ReRAM mass-production; deposition rate; film thickness; resistance random access memory; resistance uniformity; sputtering technology; switching characteristics; Controllability; Films; Resistance; Silicon; Sputtering; Switches;
Conference_Titel :
Interconnect Technology Conference (IITC), 2013 IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-0438-9
DOI :
10.1109/IITC.2013.6615582
