Title :
SiGe HBTs for millimeter-wave applications with simultaneously optimized fT and fmax of 300 GHz
Author :
Rieh, J.-S. ; Greenberg, D. ; Khater, M. ; Schonenberg, K.T. ; Jeng, S.J. ; Pagette, F. ; Adam, T. ; Chinthakindi, A. ; Florkey, J. ; Jagannathan, B. ; Johnson, J. ; Krishnasamy, R. ; Sanderson, D. ; Schnabel, C. ; Smith, P. ; Stricker, Alexander ; Sweene
Author_Institution :
IBM Semicond. R & D Center, Hopewell Junction, NY, USA
Abstract :
Millimeter-wave applications are gaining growing interest in recent times. To meet the challenges for such applications, SiGe HBTs, with simultaneously optimized fT and fmax of >300 GHz, are developed. To the author´s knowledge, this is the first report of fT and fmax both exceeding 300 GHz for any Si-based transistor. BVCEO and BVCBO are 1.6 V and 5.5 V, respectively, with peak current gain of 660. Noise measurement shows Fmin of 0.45 dB and 1.4 dB at 10 GHz and 25 GHz with associate gain of 14 dB and 8 dB, respectively. The results indicate SiGe HBTs are highly suitable for the rapidly expanding millimeter-wave applications.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; optimisation; semiconductor materials; 1.6 V; 10 GHz; 14 dB; 25 GHz; 300 GHz; 5.5 V; 8 dB; SiGe; heterojunction bipolar transistor; mm-wave HBT; optimized frequency characteristics; peak current gain; CMOS technology; Contact resistance; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave communication; Millimeter wave measurements; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
Print_ISBN :
0-7803-8333-8
DOI :
10.1109/RFIC.2004.1320632
