Title :
8 GHz, 1 V, high linearity, low power CMOS active mixer
Author :
Mahmoudi, Fariborz ; Salama, C. T Andre
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
This paper presents the design and implementation of a new 8-GHz high linearity current commutating CMOS RF mixer. The high linearity of the mixer is attributed to the novel RF transconductor stage, employing a new version of the bias-offset technique. The outstanding features of the mixer are high linearity, low voltage, low power consumption and design simplicity. A prototype implemented in 0.18 μm CMOS technology and operating at 1V power supply features an IIP3 of +3.5 dBm, an IIP2 of better than +45 dBm, an input compression point of -5.5 dBm, a power conversion gain of +6.5 dB while drawing 6.9 mA. The performance of the mixer exceeds that of previously reported active mixers while preserving simplicity of design and satisfying potential requirements for 4G mobile communication systems.
Keywords :
4G mobile communication; CMOS integrated circuits; MMIC mixers; active networks; integrated circuit design; integrated circuit measurement; mobile radio; radio equipment; 0.18 micron; 1 V; 4G mobile communication systems; 6.5 dB; 6.9 mA; 8 GHz; CMOS technology prototype; IIP2; IIP3; RF transconductor stage; bias-offset technique; current commutating CMOS RF mixer design; design simplicity; high linearity low power CMOS active mixer; input compression point; operating power supply; power consumption; power conversion gain; CMOS technology; Energy consumption; Gain; Linearity; Low voltage; Power conversion; Power supplies; Prototypes; Radio frequency; Transconductors;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
Print_ISBN :
0-7803-8333-8
DOI :
10.1109/RFIC.2004.1320635