A GaAs-based 3-40 GHz distributed mixer with cascode FET cells

Author

Ko, Won ; Kwon, Youngwoo

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

2004

fDate

6-8 June 2004

Firstpage

413

Lastpage

416

Abstract

A broadband MMIC distributed mixer with cascode FET cells was developed using commercial GaAs PHEMT foundry. The fabricated distributed mixer with a size of 1.8 mm×1.0 mm showed a high conversion gain of 3.6 dB±0.5 dB over 3 to 40 GHz RF frequency ranges at the low LO power level of 5 dBm with a fixed IF frequency of 1 GHz. An average single-sideband noise figure was 11.7 dB without IF post amplification. The LO-to-IF and LO-to-RF isolations were better than 19 dB over the entire operating frequency band. To our knowledge, this corresponds to the highest gain-bandwidth product (85 GHz) achieved from the wideband mixers.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC mixers; field effect MMIC; gallium arsenide; integrated circuit measurement; integrated circuit noise; 1.0 mm; 1.8 mm; 11.7 dB; 3 to 40 GHz; 3.1 to 4.1 dB; GaAs; GaAs PHEMT foundry; GaAs-based distributed mixer; IF post amplification; LO power level; LO-to-IF isolations; LO-to-RF isolations; RF frequency ranges; average single-sideband noise figure; broadband MMIC distributed mixer; cascode FET cells; conversion gain; fixed IF frequency; gain-bandwidth product; mixer size; operating frequency band; wideband mixers; FETs; Foundries; Frequency conversion; Gallium arsenide; MMICs; Mixers; Noise figure; PHEMTs; Radio frequency; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320638

Filename

1320638