DocumentCode :
3280894
Title :
Study of terahertz emission from bulk GaxIn1−xAs crystals photoexcited by femtosecond laser pulses
Author :
Ko, Youngok ; Sengupta, Suranjana ; Dutta, Partha ; Tomasulo, Stephanie ; Wilke, Ingrid
Author_Institution :
Dept. of Electr., Rensselaer Polytech. Inst., Troy, NY
fYear :
2008
fDate :
15-19 Sept. 2008
Firstpage :
1
Lastpage :
2
Abstract :
We report the study of terahertz emission from bulk GaxIn1-xAs crystals as function of semiconductor properties. We demonstrate that both optical rectification and ultrafast photocurrents contribute to terahertz emission depending on the Ga mole fraction and microcrystal size.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; photoemission; rectification; submillimetre wave spectra; GaxIn1-xAs; femtosecond laser pulses; optical rectification; photoexcitation; semiconductor properties; terahertz emission; ultrafast photocurrents; Crystals; Fiber nonlinear optics; Nonlinear optics; Optical films; Optical pumping; Optical refraction; Optical surface waves; Photoconductivity; Stimulated emission; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
Type :
conf
DOI :
10.1109/ICIMW.2008.4665844
Filename :
4665844
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3280894
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