• DocumentCode
    3280894
  • Title

    Study of terahertz emission from bulk GaxIn1−xAs crystals photoexcited by femtosecond laser pulses

  • Author

    Ko, Youngok ; Sengupta, Suranjana ; Dutta, Partha ; Tomasulo, Stephanie ; Wilke, Ingrid

  • Author_Institution
    Dept. of Electr., Rensselaer Polytech. Inst., Troy, NY
  • fYear
    2008
  • fDate
    15-19 Sept. 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report the study of terahertz emission from bulk GaxIn1-xAs crystals as function of semiconductor properties. We demonstrate that both optical rectification and ultrafast photocurrents contribute to terahertz emission depending on the Ga mole fraction and microcrystal size.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; photoemission; rectification; submillimetre wave spectra; GaxIn1-xAs; femtosecond laser pulses; optical rectification; photoexcitation; semiconductor properties; terahertz emission; ultrafast photocurrents; Crystals; Fiber nonlinear optics; Nonlinear optics; Optical films; Optical pumping; Optical refraction; Optical surface waves; Photoconductivity; Stimulated emission; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
  • Conference_Location
    Pasadena, CA
  • Print_ISBN
    978-1-4244-2119-0
  • Electronic_ISBN
    978-1-4244-2120-6
  • Type

    conf

  • DOI
    10.1109/ICIMW.2008.4665844
  • Filename
    4665844
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3280894