DocumentCode
3280927
Title
Novel through-silicon via technologies for 3D system integration
Author
Thadesar, Paragkumar A. ; Dembla, Ashish ; Brown, Dean ; Bakir, Muhannad S.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2013
fDate
13-15 June 2013
Firstpage
1
Lastpage
3
Abstract
To circumvent the performance and energy bottlenecks due to interconnects, novel interconnect solutions are needed both at the package and die levels. This paper reports (1) novel photodefined polymer-embedded vias within silicon interposers for improved through-silicon via insertion loss, and (2) ultrahigh density low-capacitance nanoscale TSVs with 100 nm diameter and 20:1 aspect ratio for fine-grain 3D IC implementation.
Keywords
elemental semiconductors; integrated circuit interconnections; nanoelectronics; polymers; silicon; three-dimensional integrated circuits; vias; 3D system integration; Si; fine-grain 3D IC implementation; insertion loss; low-capacitance nanoscale TSV; photodefined polymer-embedded vias; silicon interposers; size 100 nm; through-silicon via technology; ultrahigh density TSV; Copper; Dielectrics; Nanoscale devices; Polymers; Silicon; Three-dimensional displays; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference (IITC), 2013 IEEE International
Conference_Location
Kyoto
Print_ISBN
978-1-4799-0438-9
Type
conf
DOI
10.1109/IITC.2013.6615595
Filename
6615595
Link To Document