DocumentCode
3280994
Title
Graphene interconenets selectively grown on catalytic metal damascene structure and its growth mechanism on Ni catalyst
Author
Wada, Masaki ; Ishikura, Taishi ; Nishide, Daisuke ; Ito, Ban ; Yamazaki, Yasuyuki ; Saito, Takashi ; Isobayashi, Atsunobu ; Kagaya, M. ; Matsumoto, Tad ; Kitamura, Masayuki ; Sakata, A. ; Watanabe, Manabu ; Sakuma, Naoshi ; Kajita, Akihiro ; Sakai, Tadas
Author_Institution
Low-power Electron. Assoc. & Project (LEAP), Tsukuba, Japan
fYear
2013
fDate
13-15 June 2013
Firstpage
1
Lastpage
3
Abstract
The present work investigated the possibility of the formation of graphene interconnects and studied the behavior of graphene growth in wiring structure. Graphene nucleated on the facet of catalytic metal, and multi layer graphene grew along the terrace surface of catalytic metal. Selective graphene growth served the stacked interconnects structure of graphene / Ni catalytic metal.
Keywords
catalysts; chemical vapour deposition; graphene; nickel; semiconductor device metallisation; semiconductor growth; Ni; catalyst; catalytic metal damascene structure; graphene interconnects; growth mechanism; multilayer graphene; selective graphene growth; Graphene; Nickel; Plasmas; Rough surfaces; Surface roughness; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference (IITC), 2013 IEEE International
Conference_Location
Kyoto
Print_ISBN
978-1-4799-0438-9
Type
conf
DOI
10.1109/IITC.2013.6615599
Filename
6615599
Link To Document