DocumentCode :
3281059
Title :
Intercalated multi-layer graphene grown by CVD for LSI interconnects
Author :
Kondo, Daishi ; Nakano, Hisamatsu ; Bo Zhou ; Kubota, Ichiro ; Hayashi, K. ; Yagi, Keita ; Takahashi, Masaharu ; Sato, Mitsuhisa ; Sato, Seiki ; Yokoyama, Naoki
Author_Institution :
Collaborative Res. Team Green Nanoelectron. Center (GNC), AIST, Tsukuba, Japan
fYear :
2013
fDate :
13-15 June 2013
Firstpage :
1
Lastpage :
3
Abstract :
We have fabricated multi-layer graphene (MLG) wiring and demonstrated a resistivity of the same order as Cu and reliability better than Cu. The MLG was synthesized epitaxially by chemical vapor deposition (CVD) on an epitaxial Co film, resulting in quality and electrical properties as good as those of a graphite crystal. The MLG was further intercalated with FeCl3 to achieve a resistivity as low as 9.1 μΩ cm. Our results show that intercalated MLG is really promising for future LSI interconnects.
Keywords :
chemical vapour deposition; electrical resistivity; graphene; integrated circuit interconnections; integrated circuit reliability; large scale integration; C-Co; CVD; Co; LSI interconnects; chemical vapor deposition; epitaxial Co film; intercalated multilayer graphene; reliability; resistivity; Conductivity; Films; Graphene; Scanning electron microscopy; Substrates; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference (IITC), 2013 IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-0438-9
Type :
conf
DOI :
10.1109/IITC.2013.6615600
Filename :
6615600
Link To Document :
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