Electrical improvement of CNT contacts with Cu damascene top metallization

Author

van der Veen, M.H. ; Barbarin, Y. ; Vereecke, Bart ; Sugiura, Makoto ; Kashiwagi, Y. ; Cott, Daire J. ; Huyghebaert, Cedric ; Tokei, Z.

Author_Institution

imec, Leuven, Belgium

fYear

2013

fDate

13-15 June 2013

Firstpage

1

Lastpage

3

Abstract

We discuss the improvement in the electrical characterization and the performance of 150 nm diameter contacts filled with carbon nanotubes (CNT) and a Cu damascene top metal on 200mm wafers. The excellent agreement between the yield curves for the parallel and single contacts shows that a reliable electrical characterization is obtained. We demonstrate that integration changes improved the resistivity of the CNT contact significantly by reducing it from 11.8·10³ μΩ·cm down to 5.1·10³ μΩ·cm. Finally, a length scaling of the CNT contacts was used to find the individual contributors to the lowering of the single CNT contact resistance.

Keywords

carbon nanotubes; contact resistance; copper; integrated circuit interconnections; CNT contact resistance; Cu damascene top metallization; Cu-C; carbon nanotubes; electrical characterization; resistivity; Conductivity; Contact resistance; Electrical resistance measurement; Metals; Periodic structures; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2013 IEEE International

Conference_Location

Kyoto

Print_ISBN

978-1-4799-0438-9

Type

conf

DOI

10.1109/IITC.2013.6615601

Filename

6615601