Title :
Effect of base heavy doping on thermal characteristic of SiGe HBT
Author :
Qiang, Fu ; Zhang Wan-Rong ; Jin Dong-Yue ; Hong-Yun, Xie ; Xin, Zhao ; Ren-Qing, Wang
Author_Institution :
Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol. Beijing, Beijing, China
Abstract :
Based on the electro-thermal feedback model for multi-finger power SiGe heterojunction bipolar transistor (SiGe HBT), this article analyzes the effect of base heavy doping on thermal characteristic of SiGe HBT. Because of the effect of base heavy doping, SiGe HBT will produce bandgap narrowing which decreases the collector current density and affects the device thermal distribution. By analyzing the thermal characteristic of multi-finger spacing SiGe HBT, we find that increasing base doping can decrease the current density and the temperature of emitter finger, which suppress the emitter finger thermoelectric positive feedback and improve the device thermal stability.
Keywords :
current density; energy gap; heterojunction bipolar transistors; power bipolar transistors; semiconductor doping; temperature distribution; thermal stability; thermoelectricity; SiGe; bandgap narrowing; base heavy doping; collector current density; device thermal distribution; device thermal stability; electro-thermal feedback model; emitter finger thermoelectric positive feedback; multifinger power heterojunction bipolar transistor; multifinger spacing HBT; thermal characteristic; Current density; Doping; Fingers; Heterojunction bipolar transistors; Photonic band gap; Silicon germanium; Thermal stability; Base doping; SiGe HBT; Thermal Characteristic;
Conference_Titel :
Electric Information and Control Engineering (ICEICE), 2011 International Conference on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-8036-4
DOI :
10.1109/ICEICE.2011.5777650
