Improved modeling accuracy of thick metal passive SiGe/BiCMOS components for UWB using ADS momentum

Author

Tretiakov, Youri ; Groves, Robert ; Rascoe, Jay ; Mathis, Corey ; Foley, Brendan

Author_Institution

IBM Microeletronics, Essex Junction, VT, USA

fYear

2004

fDate

6-8 June 2004

Firstpage

461

Lastpage

464

Abstract

This paper demonstrates the use of ADS Momentum to model spiral and straight line inductors for ultra wide band (UWB) applications over a silicon substrate. The main focus is on the improvements in the most recent version of the Advanced-Design System (ADS 2003C), which employs a new algorithm to model metal thickness. Results for two different inductor topologies show the increased accuracy of using a thick metal approach, versus that of sheet conductors, when compared to measured test site data.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC; circuit simulation; integrated circuit measurement; integrated circuit metallisation; integrated circuit modelling; network topology; semiconductor materials; thin film inductors; ADS 2003C; ADS Momentum simulation software; Advanced-Design System; UWB; inductor topologies; metal thickness; method of moments; model algorithm; modeling accuracy; sheet conductors; spiral inductors; straight line inductors; test site data; thick metal approach; thick metal passive SiGe/BiCMOS components; ultra wide band applications; BiCMOS integrated circuits; Conductors; Germanium silicon alloys; Inductors; Silicon germanium; Spirals; Testing; Thickness measurement; Topology; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320653

Filename

1320653