Title :
A fully tunable large-signal linear MOS transconductor design using linear composite-MOSFETs
Author :
Cheng, Michael C H ; Toumazou, Chris
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci. Technol. & Med., London, UK
Abstract :
The limitations of a general MOS differential pair transconductor architecture are briefly reviewed, and a tunable scheme for linear transconductance design which allows independent tuning of its transconductance and its output impedance simultaneously within the same cell is proposed. To implement this full tuning capability, a suitable circuit in MOS technology is the linear composite-MOSFET (COMFET) proposed by the authors (1991). Although the COMFET realization described is nonoptimum, it serves to demonstrate the principle
Keywords :
electric admittance; insulated gate field effect transistors; tuning; COMFET; differential pair transconductor architecture; independent tuning; large-signal linear MOS transconductor; linear composite-MOSFETs; output impedance; Circuit optimization; Filters; Frequency; Impedance; Kirchhoff´s Law; Maintenance engineering; Threshold voltage; Transconductance; Transconductors; Tunable circuits and devices;
Conference_Titel :
Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0593-0
DOI :
10.1109/ISCAS.1992.230653
