A 5.25 GHz SiGe bipolar power amplifier for IEEE 802.11a wireless LAN

Author

Bakalski, Winfried ; Kitlinski, Krzysztof ; Donig, Günter ; Kapfelsperger, Boris ; Österreicher, Wilfried ; Auchter, Wolfgang ; Weigel, Robert ; Scholtz, Arpad L.

Author_Institution

Infineon Technol. AG., Munich, Germany

fYear

2004

fDate

6-8 June 2004

Firstpage

567

Lastpage

570

Abstract

An integrated wireless LAN radio frequency power amplifier (PA) for 5.25 GHz has been realized in a 40 GHz-f_T, 0.35 μm-SiGe-bipolar technology. The single-ended 3-stage power amplifier uses on-chip inductors and a short on-chip stripline for the interstage matching. At 3.3 V supply voltage the OP1dB is 23.8 dBm, and a saturated output power of 25.9 dBm is achieved at 5.25 GHz. The PAE at the OP1dB is 24%. The small-signal gain is 27 dB.

Keywords

Ge-Si alloys; MMIC power amplifiers; bipolar analogue integrated circuits; impedance matching; semiconductor materials; strip lines; wireless LAN; 0.35 micron; 24 percent; 27 dB; 3.3 V; 40 GHz; 5.25 GHz; IEEE 802.11a wireless LAN; SiGe; bipolar power amplifier; interstage matching; on-chip inductors; on-chip stripline; radio frequency power amplifier; single-ended multiple-stage power amplifier; Germanium silicon alloys; Inductors; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Stripline; Voltage; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320684

Filename

1320684