Title :
High efficiency 5GHz CMOS power amplifier with adaptive bias control circuit
Author :
Eo, Yunseong ; Lee, KwangDu
Author_Institution :
I-networking Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea
Abstract :
A 5 GHz automatically bias controlled power amplifier is manufactured in a 0.18 μm CMOS process and occupies 0.54 mm2. The measured power gain, P1dB, and PAE are 7.1 dB, 19.2 dBm, and 17.5%, respectively. For fair comparison, the same PA without the bias circuit is also implemented. The fully integrated bias control circuit improves the power efficiency by 21% at 13 dBm output power. Moreover, the P1dB is also improved from 18.3 dBm to 19.2 dBm.
Keywords :
CMOS analogue integrated circuits; MMIC power amplifiers; adaptive control; 0.18 micron; 17.5 percent; 5 GHz; 7.1 dB; adaptive bias control circuit; automatic bias control; high efficiency CMOS power amplifier; microwave power amplifiers; power added efficiency; Adaptive control; Automatic control; CMOS process; Circuits; High power amplifiers; Manufacturing automation; Manufacturing processes; Power amplifiers; Power measurement; Programmable control;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
Print_ISBN :
0-7803-8333-8
DOI :
10.1109/RFIC.2004.1320686
