• DocumentCode
    3281777
  • Title

    High efficiency 5GHz CMOS power amplifier with adaptive bias control circuit

  • Author

    Eo, Yunseong ; Lee, KwangDu

  • Author_Institution
    I-networking Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea
  • fYear
    2004
  • fDate
    6-8 June 2004
  • Firstpage
    575
  • Lastpage
    578
  • Abstract
    A 5 GHz automatically bias controlled power amplifier is manufactured in a 0.18 μm CMOS process and occupies 0.54 mm2. The measured power gain, P1dB, and PAE are 7.1 dB, 19.2 dBm, and 17.5%, respectively. For fair comparison, the same PA without the bias circuit is also implemented. The fully integrated bias control circuit improves the power efficiency by 21% at 13 dBm output power. Moreover, the P1dB is also improved from 18.3 dBm to 19.2 dBm.
  • Keywords
    CMOS analogue integrated circuits; MMIC power amplifiers; adaptive control; 0.18 micron; 17.5 percent; 5 GHz; 7.1 dB; adaptive bias control circuit; automatic bias control; high efficiency CMOS power amplifier; microwave power amplifiers; power added efficiency; Adaptive control; Automatic control; CMOS process; Circuits; High power amplifiers; Manufacturing automation; Manufacturing processes; Power amplifiers; Power measurement; Programmable control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
  • ISSN
    1529-2517
  • Print_ISBN
    0-7803-8333-8
  • Type

    conf

  • DOI
    10.1109/RFIC.2004.1320686
  • Filename
    1320686
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3281777