A low power Ka-band SiGe HBT VCO using line inductors

Author

Chen, Yi-Jan Emery ; Kuo, Wei-Min Lance ; Lee, Jongsoo ; Cressler, John D. ; Laskar, Joy ; Freeman, Greg

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2004

fDate

6-8 June 2004

Firstpage

587

Lastpage

590

Abstract

An integrated low power, low phase noise Ka-band differential voltage-controlled oscillator (VCO) is developed in a 0.12-μm 200 GHz SiGe HBT technology. The use of line inductors instead of transmission lines is demonstrated to be feasible in LC-tuned resonators for Ka-band applications. The VCO operates on 1.6 V and dissipates 3.7 mW of power. A phase noise of -99 dBc/Hz at 1 MHz offset from the carrier frequency of 33 GHz is achieved, together with a VCO figure-of-merit of -183.7 dBc/Hz.

Keywords

Ge-Si alloys; bipolar MIMIC; circuit tuning; heterojunction bipolar transistors; inductors; low-power electronics; millimetre wave oscillators; phase noise; semiconductor materials; voltage-controlled oscillators; 0.12 micron; 1.6 V; 200 GHz; 3.7 mW; 33 GHz; HBT VCO; LC-tuned resonators; SiGe; VCO figure-of-merit; differential voltage-controlled oscillator; line inductors; low phase noise VCO; low power Ka-band VCO; Design engineering; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Integrated circuit technology; Phase noise; Power engineering and energy; Power transmission lines; Silicon germanium; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320689

Filename

1320689