DocumentCode
3282022
Title
Experimental extraction and model evaluation of base and collector current RF noise in SiGe HBTs
Author
Niu, Guofu ; Xia, Kejun ; Sheridan, David ; Harame, D.L.
Author_Institution
Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA
fYear
2004
fDate
6-8 June 2004
Firstpage
615
Lastpage
618
Abstract
This work presents experimental extraction of intrinsic base and collector current noise of SiGe HBTs as well as their correlation. Using the extraction results, several widely used noise models are evaluated, including the conventional SPICE model, the Van Vliet model, and the transport noise model. Connections and differences between various models are discussed.
Keywords
Ge-Si alloys; SPICE; electric noise measurement; equivalent circuits; heterojunction bipolar transistors; semiconductor device measurement; semiconductor device models; semiconductor materials; HBT; RF noise modeling; SPICE; SiGe; Van Vliet model; base current noise; collector current noise; equivalent circuit; noise model correlation; parameter extraction; transport noise model; Circuit noise; Current measurement; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Noise measurement; Radio frequency; SPICE; Scattering parameters; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
ISSN
1529-2517
Print_ISBN
0-7803-8333-8
Type
conf
DOI
10.1109/RFIC.2004.1320696
Filename
1320696
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