Title :
Technique for preparing defect-free high aspect ratio SU-8 resist structure using x-ray lithography
Author :
Singh, V.K. ; Maekawa, S. ; Katori, M. ; Minamiyama, Y. ; Noda, D. ; Hattori, T.
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Kyoto, Japan
Abstract :
This paper describes a process of deep x-ray lithography (DXRL) using epoxy negative photoresist SU-8. Resist coating, soft bake, exposure dose, post exposure bake (PEB), and development of the resist are characterized. The negative resist SU-8 has been increasingly used in microand nanotechnologies due to its excellent coating and processing properties as well as its mechanical and chemical stability. A fabrication of polymer based high aspect ratio (HAR) micro-channel structure is investigated by x-ray lithography system.
Keywords :
nanotechnology; photoresists; DXRL; SU-8 resist structure; deep x-ray lithography; defect-free high aspect ratio; epoxy negative photoresist SU-8; microtechnologies; nanotechnologies; Internal stresses; Microstructure; Optical device fabrication; Resists; Thermal expansion; X-ray lithography;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-775-7
DOI :
10.1109/NEMS.2011.6017397
