Microwave performance of monolithic silicon passive transformers

Author

Bohsali, Mounir Y. ; Niknejad, Ali M.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

2004

fDate

6-8 June 2004

Firstpage

647

Lastpage

650

Abstract

This paper presents a comparative study between three transformer layout styles, namely the Frlan style, the planar shunt style and the three-dimensional series style, in terms of their minimum insertion loss, gain bandwidth, and transformation ratio over a broad frequency range. A new performance metric, the frequency dependant 1 dB insertion loss bandwidth is presented. Measured insertion loss as low as 2 dB at 20 GHz has been observed. Furthermore, it is shown that with proper layout, a transformation ratio as high as 40:1 is possible over a bandwidth of 40 %.

Keywords

MMIC; high-frequency transformers; impedance matching; integrated circuit layout; radiofrequency integrated circuits; transformer windings; 20 GHz; Frlan layout; MMIC; broad frequency range; frequency dependant insertion loss bandwidth; gain bandwidth; impedance matching; microwave performance; minimum insertion loss; monolithic passive transformers; performance metric; planar shunt layout; radio frequency integrated circuits; three-dimensional series layout; transformation ratio; Bandwidth; Frequency; Inductors; Insertion loss; Loss measurement; Performance gain; Performance loss; Shunt (electrical); Silicon; Transformers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320704

Filename

1320704