Dual gate FET hydrogen gas sensor

Author

Tsukada, K. ; Kariya, M. ; Yamaguchi, T. ; Kiwa, T. ; Yamada, H. ; Kunitsugu, S. ; Maehara, T. ; Yamamoto, T.

Author_Institution

Grad. Sch. of Natural Sci. & Technol., Okayama Univ., Okayama, Japan

fYear

2009

fDate

25-28 Oct. 2009

Firstpage

517

Lastpage

519

Abstract

We developed a dual gate FET hydrogen gas sensor for application to hydrogen vehicles. The dual gate FET hydrogen sensor was integrated with Pt-gate FET to detect hydrogen and Ti-gate FET as the reference sensor in the same Si chip. Ti-gate FET has the same structure as Pt-FET except for the gate metal. The Pt-FET showed good response to hydrogen gas above 10 ppm in air, while the Ti-FET did not show any response to hydrogen gas. The differential output voltage between the Pt-FET and the Ti-FET was stable in the range of room temperature to 80Â°C because of the same temperature dependence of the I-V characteristic.

Keywords

field effect transistors; gas sensors; hydrogen; platinum; titanium; H₂; I-V characteristic; Pt; Pt-gate FET; Ti; Ti-gate FET; differential output voltage; dual gate FET hydrogen gas sensor; hydrogen vehicles; room temperature; temperature 293 K to 353 K; thermal compensation; FETs; Fuel cell vehicles; Gas detectors; Hydrogen; Protons; Sensor phenomena and characterization; Temperature dependence; Temperature sensors; Thermal sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2009 IEEE

Conference_Location

Christchurch

ISSN

1930-0395

Print_ISBN

978-1-4244-4548-6

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2009.5398290

Filename

5398290