Title :
Dual gate FET hydrogen gas sensor
Author :
Tsukada, K. ; Kariya, M. ; Yamaguchi, T. ; Kiwa, T. ; Yamada, H. ; Kunitsugu, S. ; Maehara, T. ; Yamamoto, T.
Author_Institution :
Grad. Sch. of Natural Sci. & Technol., Okayama Univ., Okayama, Japan
Abstract :
We developed a dual gate FET hydrogen gas sensor for application to hydrogen vehicles. The dual gate FET hydrogen sensor was integrated with Pt-gate FET to detect hydrogen and Ti-gate FET as the reference sensor in the same Si chip. Ti-gate FET has the same structure as Pt-FET except for the gate metal. The Pt-FET showed good response to hydrogen gas above 10 ppm in air, while the Ti-FET did not show any response to hydrogen gas. The differential output voltage between the Pt-FET and the Ti-FET was stable in the range of room temperature to 80°C because of the same temperature dependence of the I-V characteristic.
Keywords :
field effect transistors; gas sensors; hydrogen; platinum; titanium; H2; I-V characteristic; Pt; Pt-gate FET; Ti; Ti-gate FET; differential output voltage; dual gate FET hydrogen gas sensor; hydrogen vehicles; room temperature; temperature 293 K to 353 K; thermal compensation; FETs; Fuel cell vehicles; Gas detectors; Hydrogen; Protons; Sensor phenomena and characterization; Temperature dependence; Temperature sensors; Thermal sensors; Voltage;
Conference_Titel :
Sensors, 2009 IEEE
Conference_Location :
Christchurch
Print_ISBN :
978-1-4244-4548-6
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2009.5398290
