• DocumentCode
    3282320
  • Title

    Design, fabrication, and preliminary test of mutil-layers nano resonant tunneling film gyroscope

  • Author

    Liu, Jun ; Du, Kang ; Li, Mengwei ; Shi, Yunbo

  • Author_Institution
    Nat. Key Lab. for Electron. Meas. Technol., Taiyuan, China
  • fYear
    2009
  • fDate
    25-28 Oct. 2009
  • Firstpage
    526
  • Lastpage
    531
  • Abstract
    A novel structure MEMS gyroscope using the multi-layers nano resonant tunneling film with meso-piezoresistive effect is introduced in this paper. According to the theory of drive and detection, the folding-type orthogonal beam structure is designed, and the simulation of ANSYS proves that the structure does not only meet the drive approach, but also meets the detection conditions. This kind of gyroscope has been fabricated by GaAs IC surface processes and control hole etching technology. The Wheatstone bridge circuit with negative differential resistance of RTD is established to detect the change of stress at the base of detection beam. According to the experiment results, the I-V characteristics of RTDs are changed obviously in the role of stress, and prove that the detection beam based on RTD is feasible.
  • Keywords
    III-V semiconductors; aluminium compounds; beams (structures); detector circuits; electrical resistivity; etching; gallium arsenide; gyroscopes; indium compounds; microsensors; multilayers; nanosensors; piezoresistance; resonant tunnelling diodes; thin film sensors; ANSYS; GaAs-In0.1Ga0.9As-AlAs; I-V characteristics; MEMS gyroscope; RTD; Wheatstone bridge circuit; folding-type orthogonal beam structure; hole etching; mesopiezoresistive effect; multilayer nanoresonant tunneling film; negative differential resistance; resonant tunneling diodes; stress change; Circuit simulation; Fabrication; Gallium arsenide; Gyroscopes; Micromechanical devices; Process control; Resonant tunneling devices; Stress; Surface resistance; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2009 IEEE
  • Conference_Location
    Christchurch
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-4548-6
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2009.5398293
  • Filename
    5398293