Title :
A Novel High Performance Integrated Phototransistor Photodetector (PTPD) In Standard SiGe BiCMOS Technology
Author :
Lai, Kuang-Sheng ; Huang, Ji-Chen ; Hsu, Klaus Y J
Author_Institution :
Inst. of Electron. Eng., National Tsing Hua Univ., Hsinchu
Abstract :
A novel high performance integrated PTPD is proposed. The device incorporates a standard phototransistor (PT) and a surface photodetector (SPD) to frilly utilize the incident light energy. Samples in standard 0.35mum SiGe BiCMOS technology were fabricated and characterized. Compared with reference PT of the same size, the PTPD exhibits one order of magnitude improvement in responsivity
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; photodetectors; phototransistors; BiCMOS; PTPD; SiGe; high performance integrated phototransistor photodetector; standard phototransistor; surface photodetector; BiCMOS integrated circuits; Detectors; Germanium silicon alloys; Lighting; Phase change materials; Photodetectors; Phototransistors; Power engineering and energy; Silicon germanium; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1595954
