Title :
Micro inductor for RF ICs with NiCuZn ferrite film
Author :
Li, Feng ; Ye, Shuangli ; Li, Shifeng ; Shi, Xinzhi
Author_Institution :
Inst. of Microelectron. & Inf. Technol., Wuhan Univ., Wuhan, China
Abstract :
A thin-film inductor with Ni0.3Cu0.1Zn0.6Fe2O4 film for the RF range is fabricated by using IC compatible processes, which is composed of SiO2 insulating layer / NiCuZn ferrite film layer / SiO2 insulating layer / Cu coils. The magnetic properties of Ni0.3Cu0.1Zn0.6Fe2O4 thin film are discussed. High frequency performances of the micro-inductor are measured using network analyzer from 50MHz to 9GHz. The inductance (L) of the micro-inductor is 1.976nH and the quality factor (Q) is 5.06 at 1GHz. Compared with micro-inductor that has same structure but no magnetic film, L and Q are enhanced about 7.6% and 8.4%, respectively. The inductance (L) of the micro-inductor is 2.008nH and the quality factor (Q) is 9.19 at 2GHz. Compared with micro-inductor that has same structure but no magnetic film, L and Q are enhanced about 7.7% and 3.6%, respectively. With the improvement of L and Q, the size of ferrite thin-film inductor can be reduced effectively.
Keywords :
Q-factor; copper compounds; ferrites; nickel compounds; radiofrequency integrated circuits; silicon compounds; thin film inductors; Ni0.3Cu0.1Zn0.6Fe2O4; RF IC; SiO2; SiO2 insulating layer; ferrite film; frequency 1 GHz; frequency 2 GHz; frequency 50 MHz to 9 GHz; inductance; magnetic property; microinductor; network analyzer; quality factor; thin-film inductor; Copper; Ferrite films; Inductors; Radio frequency; Soft magnetic materials; NiCuZn ferrite film; RF; micro inductor;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-775-7
DOI :
10.1109/NEMS.2011.6017417
