DocumentCode :
3282500
Title :
An experimental 4RTD logic gate
Author :
Yamada, A. ; Yamada, H. ; Waho, T. ; Khorenko, V. ; Do, T. ; Prost, W.
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo
fYear :
2005
fDate :
7-9 Dec. 2005
Firstpage :
19
Lastpage :
20
Abstract :
A novel logic circuit using resonant-tunneling diodes (RTD), called a 4RTD logic gate, was proposed recently, and possible 200-GHz AND/OR and NAND/NOR operations were predicted by circuit simulations [Yamada,2005]. This paper presents, for the first time, experimental results of the 4RTD logic gate. In particular, an experimental current-mode AND gate has been successfully demonstrated
Keywords :
circuit simulation; logic circuits; logic gates; resonant tunnelling diodes; 200 GHz; 4RTD logic gate; AND/OR operation; NAND/NOR operation; circuit simulation; logic circuit; resonant-tunneling diode; HEMTs; Indium phosphide; Logic circuits; Logic gates; MODFETs; Resistors; Semiconductor device measurement; Switches; Switching circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1595955
Filename :
1595955
Link To Document :
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