DocumentCode
3282500
Title
An experimental 4RTD logic gate
Author
Yamada, A. ; Yamada, H. ; Waho, T. ; Khorenko, V. ; Do, T. ; Prost, W.
Author_Institution
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo
fYear
2005
fDate
7-9 Dec. 2005
Firstpage
19
Lastpage
20
Abstract
A novel logic circuit using resonant-tunneling diodes (RTD), called a 4RTD logic gate, was proposed recently, and possible 200-GHz AND/OR and NAND/NOR operations were predicted by circuit simulations [Yamada,2005]. This paper presents, for the first time, experimental results of the 4RTD logic gate. In particular, an experimental current-mode AND gate has been successfully demonstrated
Keywords
circuit simulation; logic circuits; logic gates; resonant tunnelling diodes; 200 GHz; 4RTD logic gate; AND/OR operation; NAND/NOR operation; circuit simulation; logic circuit; resonant-tunneling diode; HEMTs; Indium phosphide; Logic circuits; Logic gates; MODFETs; Resistors; Semiconductor device measurement; Switches; Switching circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Conference_Location
Bethesda, MD
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1595955
Filename
1595955
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