Electrical and structural characterization of GaN nanowire based devices

III-nitride based semiconductors have been under intense research focus in recent years largely due to their electronic and optoelectronic applications. In comparison to large area devices, III-nitride nanowire based devices provide unique opportunity to dramatically improve device efficiency and scope of integration, as well as, reduce device cost. In this talk, the author present the growth, device fabrication, and electrical and structural characterization of GaN nanowires (20 nm typical diameter) grown by direct reaction between metallic Ga and ammonia. GaN nanowires were grown on SiO₂ covered doped Si substrates using Ni catalyst, and metal contacts (stack of Ti/Al/Mo/Au) were deposited at the two ends (nominally 4 micron apart) using a novel pre-aligned nanowire growth and fabrication process, to fabricate backgated FETs with the Si substrate as gate terminal