DocumentCode
3282621
Title
An Accurate Model of the C-V Characteristic due to Quantum Mechanical Effects for the Surrounding Gate Transistor
Author
Haneda, Hideo ; Sakamoto, Wataru ; Pesic, Iliya I. ; Nakamura, Hiroki ; Sakuraba, Hiroshi ; Masuoka, Fujio
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
34
Lastpage
35
Keywords
Analytical models; Capacitance-voltage characteristics; Educational institutions; Effective mass; Electrons; MOS capacitors; MOS devices; MOSFETs; Quantum mechanics; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1595963
Filename
1595963
Link To Document