• DocumentCode
    3282674
  • Title

    Breaking the Theoretical Limit of SiC Unipolar Power Device - a Simulation Study

  • Author

    Yu, L.C. ; Sheng, K.

  • fYear
    2005
  • fDate
    Dec. 7-9, 2005
  • Firstpage
    42
  • Lastpage
    43
  • Keywords
    Computational modeling; Doping; MOSFET circuits; Power engineering and energy; Power engineering computing; Power semiconductor devices; Semiconductor materials; Silicon carbide; Structural engineering; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2005 International
  • Print_ISBN
    1-4244-0083-X
  • Type

    conf

  • DOI
    10.1109/ISDRS.2005.1595967
  • Filename
    1595967
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3282674