DocumentCode :
3282729
Title :
Surface uniform wet etching of ZnO films and influence of oxygen annealing on etching properties
Author :
Zhang, Tao ; Sun, Lei ; Han, Dedong ; Wang, Yi ; Han, Ruqi
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fYear :
2011
fDate :
20-23 Feb. 2011
Firstpage :
626
Lastpage :
629
Abstract :
Wet etchings of ZnO films with HCl, H3PO4 and NH4Cl as etchants were systematically studied. The etching morphology and etching rate were focused on and reported in details. The investigation shows that the NH4Cl aqueous solution can provide uniform etching rate in the entire regions exposed to the etchant, and the etching rate always changes linearly with NH4Cl solution concentrations in a wide range. The etching rate will be stable if a constant concentration is applied. We also took the influence of different annealing conditions on etching properties into accounts. Under a certain annealing condition, the NH4Cl aqueous solution still provides uniform etching properties and controllable etching rates. These properties of NH4Cl aqueous solution as etchant will bring wide design window to real applications. The above results indicate NH4Cl is a promising etchant for ZnO wet etching.
Keywords :
II-VI semiconductors; annealing; etching; semiconductor thin films; wide band gap semiconductors; ZnO; annealing; aqueous solution; design window; etching morphology; etching rate; surface uniform wet etching; thin films; Annealing; Films; Silicon; Wet etching; Zinc oxide; NH4Cl solution; ZnO thin film; annealing; etching morphology; etching rate; wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-775-7
Type :
conf
DOI :
10.1109/NEMS.2011.6017433
Filename :
6017433
Link To Document :
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