Modeling the Temperature Dependence and Optical Response of HgCdTe Diodes

Author

Akturk, A. ; Goldsman, N. ; Dhar, N. ; Wijewarnasuriya, P.S.

Author_Institution

Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD

fYear

2005

fDate

7-9 Dec. 2005

Firstpage

70

Lastpage

71

Abstract

Mercury cadmium telluride (HgCdTe) has found applications for infrared photodetectors. By varying the bandgap using the composition parameter x, Hg_1-xCd_xTe can be optimized for detecting wavelengths ranging from 3-17mum (Saleh and Teich, 1991). One critical factor in detecting low energy light is that the bandgap of HgCdTe is relatively small (approx. 0.2eV), and thus temperature dependent dark current much be accounted for during operation. To optimize device performance, we have developed a device simulator for modeling HgCdTe as a function of illumination, temperature, doping and bias

Keywords

cadmium compounds; infrared detectors; mercury compounds; photodetectors; photodiodes; 3 to 17 micron; HgCdTe; device simulator; diodes; illumination; infrared photodetectors; mercury cadmium telluride; temperature dependent dark current; Cadmium compounds; Dark current; Diodes; Lighting; Mercury (metals); Photodetectors; Photonic band gap; Semiconductor process modeling; Tellurium; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2005 International

Conference_Location

Bethesda, MD

Print_ISBN

1-4244-0083-X

Type

conf

DOI

10.1109/ISDRS.2005.1595982

Filename

1595982