Title :
Modeling the Temperature Dependence and Optical Response of HgCdTe Diodes
Author :
Akturk, A. ; Goldsman, N. ; Dhar, N. ; Wijewarnasuriya, P.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD
Abstract :
Mercury cadmium telluride (HgCdTe) has found applications for infrared photodetectors. By varying the bandgap using the composition parameter x, Hg1-xCdxTe can be optimized for detecting wavelengths ranging from 3-17mum (Saleh and Teich, 1991). One critical factor in detecting low energy light is that the bandgap of HgCdTe is relatively small (approx. 0.2eV), and thus temperature dependent dark current much be accounted for during operation. To optimize device performance, we have developed a device simulator for modeling HgCdTe as a function of illumination, temperature, doping and bias
Keywords :
cadmium compounds; infrared detectors; mercury compounds; photodetectors; photodiodes; 3 to 17 micron; HgCdTe; device simulator; diodes; illumination; infrared photodetectors; mercury cadmium telluride; temperature dependent dark current; Cadmium compounds; Dark current; Diodes; Lighting; Mercury (metals); Photodetectors; Photonic band gap; Semiconductor process modeling; Tellurium; Temperature dependence;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1595982
