Title :
Novel Schottky Barrier Strained Germanium PMOS
Author :
Peng, C.-Y. ; Yuan, F. ; Lee, M.H. ; Yu, C.Y. ; Maikap, S. ; Liao, M.H. ; Chang, S.T. ; Liu, C.W.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ.
Abstract :
The ultra thin Ge epitaxially grown on Si with compressive strain has the advantages of high mobility, very low cost and compatibility with CMOS process. The epi-Ge channel needs to be thick enough for carrier transport and as thin as possible to keep Ge strained. In this work, we investigate and optimize the channel design of Ge/Si heterojunction PMOS
Keywords :
MOSFET; Schottky barriers; epitaxial growth; germanium; semiconductor heterojunctions; silicon; CMOS process; Ge-Si; Schottky barrier; carrier transport; channel design; compressive strain; epitaxial growth; heterojunction PMOS; CMOS technology; Capacitive sensors; Costs; Dielectrics; Germanium; Heterojunctions; Quantum mechanics; Rough surfaces; Schottky barriers; Surface roughness;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1595989
