• DocumentCode
    3283010
  • Title

    Novel Schottky Barrier Strained Germanium PMOS

  • Author

    Peng, C.-Y. ; Yuan, F. ; Lee, M.H. ; Yu, C.Y. ; Maikap, S. ; Liao, M.H. ; Chang, S.T. ; Liu, C.W.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ.
  • fYear
    2005
  • fDate
    7-9 Dec. 2005
  • Firstpage
    84
  • Lastpage
    85
  • Abstract
    The ultra thin Ge epitaxially grown on Si with compressive strain has the advantages of high mobility, very low cost and compatibility with CMOS process. The epi-Ge channel needs to be thick enough for carrier transport and as thin as possible to keep Ge strained. In this work, we investigate and optimize the channel design of Ge/Si heterojunction PMOS
  • Keywords
    MOSFET; Schottky barriers; epitaxial growth; germanium; semiconductor heterojunctions; silicon; CMOS process; Ge-Si; Schottky barrier; carrier transport; channel design; compressive strain; epitaxial growth; heterojunction PMOS; CMOS technology; Capacitive sensors; Costs; Dielectrics; Germanium; Heterojunctions; Quantum mechanics; Rough surfaces; Schottky barriers; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2005 International
  • Conference_Location
    Bethesda, MD
  • Print_ISBN
    1-4244-0083-X
  • Type

    conf

  • DOI
    10.1109/ISDRS.2005.1595989
  • Filename
    1595989
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3283010