Title :
Optical and Current Noise of GaN Based Light Emitting Diodes
Author :
Sawyer, S. ; Rumyantsev, S.L. ; Pala, N. ; Shur, M.S. ; Bilenko, Yu ; Zhang, J.P. ; Hu, X. ; Lunev, A. ; Deng, J. ; Gaska, R.
Author_Institution :
Dept. of Electr., Comput., & Syst., Rensselaer Polytech. Inst., Troy, NY
Abstract :
Ultraviolet (UV) light emitting diodes (LEDs) are expected to find applications for solid-state lighting, water and air purification, bio-agent detection, and biological fluorescence experiments. For identifying miniscule amounts of hazardous biological pathogens and for the detection of fluorescence from protein molecules excited with the UV light (200-300nm) the light source must exhibit low noise and high stability over tens of minutes. The authors report on the low frequency fluctuations of the current and light intensity of SET UVTOPreg LEDs (fabricated by SET, Inc.) with wavelengths ranging from 265nm to 340nm
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; light sources; optical noise; wide band gap semiconductors; 200 to 300 nm; 265 to 340 nm; GaN; SET UVTOP LED; UV light emitting diodes; UV light source; air purification; bio-agent detection; biological fluorescence; current noise; fluorescence detection; hazardous biological pathogens; optical noise; protein molecules; solid-state lighting; water purification; Biomedical optical imaging; Fluorescence; Gallium nitride; Light emitting diodes; Optical noise; Pathogens; Proteins; Purification; Solid state lighting; Stimulated emission;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1595992
