DocumentCode
3283177
Title
Impact of Source/Drain Si1-yCy Stressors on the Strained Si NMOSFETs
Author
Huang, Jacky ; Chang, S.T.
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
107
Lastpage
108
Keywords
Capacitive sensors; Difference equations; Electron mobility; Etching; Lattices; MOSFETs; Poisson equations; Shape; Silicon carbide; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596001
Filename
1596001
Link To Document