DocumentCode :
3283193
Title :
Impact of Epitaxial NiSi/sub 2/ Source/Drain on Short Channel Effect and Line Edge Roughness in Extremely Scaled MOSFETs
Author :
Migita, S. ; Mise, N. ; Watanabe, Y. ; Kadoshima, M. ; Fujiwara, H. ; Ohno, M. ; Takaba, H. ; Iwamoto, K. ; Ogawa, A. ; Nabatame, T. ; Satake, H. ; Toriumi, A.
Author_Institution :
MIRAI-AIST, Tsukuba
fYear :
2005
fDate :
7-9 Dec. 2005
Firstpage :
111
Lastpage :
112
Abstract :
The impact of epitaxial NiSi2 S/D on MOSFET performance has been investigated. Atomically flat NiSi2/Si (111)-facet interface and straight S/D edges irrespective of the gate edge roughness contribute to suppressing SCE
Keywords :
MOSFET; nickel compounds; silicon; surface roughness; MOSFET performance; NiSi2-Si; epitaxial nickel silicide source/drain; gate edge roughness; line edge roughness; short channel effect; Annealing; Atomic layer deposition; FETs; High K dielectric materials; High-K gate dielectrics; Impurities; MOS devices; MOSFETs; Schottky barriers; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596003
Filename :
1596003
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3283193
بازگشت