• DocumentCode
    3283203
  • Title

    Improved Electrical Characteristics and Retention Time of DRAMs Using HSG-merged-AHO Cylinder Capacitor

  • Author

    Kim, S.G. ; Hyun, C.S. ; Park, D. ; Kim, S.J. ; Cho, T.H. ; Kang, H.J. ; Lee, S.-H. ; Suk, J.G. ; Lim, B.K. ; Jeon, Y.S. ; Hwang, K.H. ; Hong, H.S. ; Jeon, S.G. ; Lee, K.Y. ; Oh, K.S. ; Park, D.G.

  • Author_Institution
    Device Res. Team, Samsung Electron. Co., Yongin
  • fYear
    2005
  • fDate
    7-9 Dec. 2005
  • Firstpage
    113
  • Lastpage
    114
  • Abstract
    Fully integrated 512Mb DRAMs using HSG-merged-AHO cylinder capacitor were successfully developed for the first time. Improved electrical characteristics and retention time of HSG-merged-AHO capacitor DRAM was achieved without any capacitor-related leakage current failure in 110nm technology. This technology is expected to be extended to sub-100nm technology
  • Keywords
    DRAM chips; aluminium compounds; capacitors; electric properties; hafnium compounds; 512 Mbit; Al2O3-HfO2; DRAM; HSG-merged-AHO cylinder capacitor; electrical characteristics; retention time; Aluminum oxide; Capacitance; Capacitors; Electric variables; Electrodes; Leakage current; Random access memory; Scanning electron microscopy; Silicon; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2005 International
  • Conference_Location
    Bethesda, MD
  • Print_ISBN
    1-4244-0083-X
  • Type

    conf

  • DOI
    10.1109/ISDRS.2005.1596004
  • Filename
    1596004
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3283203