Fabrication of sol-gel-derived zinc oxide thin-film transistor

Author

Shieh, Shao-Hui ; You, Hsin-Chiang ; Shao, Chyi-Yau

Author_Institution

Dept. of Electron. Eng., Nat. Chin-Yi Univ. of Technol., Taichung, Taiwan

fYear

2011

fDate

20-23 Feb. 2011

Firstpage

736

Lastpage

739

Abstract

In this paper, a zinc oxide (ZnO) thin-film transistor (TFT) has been developed by using the sol-gel method with spin coating. Solution-processed thin-film deposition method is used to overcome the drawback of other vacuum deposition techniques in which process needs high temperature coating and expensive equipment. In order to analyze the characteristics of ZnO film, atomic force microscopy (AFM) is used to investigate the roughness of ZnO film. The experimental results show that the thickness of ZnO film is ranging from 5 nm to 10 nm with mean roughness 0.683 nm. The I-V characteristic of ZnO thin film transistor shows high current on-to-off ratio up to 10⁶.

Keywords

sol-gel processing; spin coating; thin film transistors; zinc compounds; AFM; TFT; ZnO; ZnO film roughness; atomic force microscopy; high temperature coating; sol-gel method; solution-processed thin-film deposition; spin coating; thin-film transistor; vacuum deposition; zinc oxide; Annealing; Fabrication; Films; Logic gates; Silicon; Thin film transistors; Zinc oxide; II–VI semiconductors; semiconductor growth; sol-gel processing; thin film transistors; zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on

Conference_Location

Kaohsiung

Print_ISBN

978-1-61284-775-7

Type

conf

DOI

10.1109/NEMS.2011.6017459

Filename

6017459