A 512 bits Phase Change Memory embedded IP based on 0.18-µm CMOS process

Author

Ding, Sheng ; Song, Zhitang ; Chen, Houpeng

Author_Institution

State Key Lab. of Functional Mater. for Inf., Chinese Acad. of Sci., Shanghai, China

fYear

2011

fDate

15-17 April 2011

Firstpage

16

Lastpage

19

Abstract

A 512 bits Phase Change Memory (PCM) embedded IP has been successfully achieved based on 0.18-μm CMOS process. The material of PCM is Ge₂Sb₂Te₅. And the cell structure of PCM is 1R1T which can be compatible with CMOS process. The size of heat electrode is 90 nm, while the standard electrode is 260 nm, which can reduce the reset current. The full chip periphery circuit including read/write drive, decoder and PCM array is designed to realize the load/store function and enhance the performance. According to our test results, the Reset/Set parameters are: Reset/3 mA/60 ns and Set/0.6 mA/400 ns/. The yield of our test chip is up to 96.7%, while the endurance is up to 10⁷. The data retention of PCM cell can be extrapolated to 10 years data retention time at 80°C.

Keywords

CMOS memory circuits; phase change memories; CMOS process; PCM array; cell structure; chip periphery circuit; decoder; heat electrode; load-store function; phase change memory embedded IP; read-write drive; reset current; reset-set parameters; size 0.18 mum; temperature 80 degC; word length 512 bit; CMOS process; Electrodes; Heating; IP networks; Phase change materials; Phase change memory; Resistance; PCM; circuit; embedded IP; endurance; yield;

fLanguage

English

Publisher

ieee

Conference_Titel

Electric Information and Control Engineering (ICEICE), 2011 International Conference on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-8036-4

Type

conf

DOI

10.1109/ICEICE.2011.5777752

Filename

5777752