Title :
Work Function Tuning Via Ultra Thin Charged Reaction Layers Using AlTa and AlTaN Alloys
Author :
Chen, Bei ; Jha, Rashmi ; Misra, Veena
Keywords :
Aluminum alloys; Annealing; Boron; Electrodes; Hafnium oxide; High-K gate dielectrics; MOS devices; Silicon alloys; Threshold voltage; Tuning;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596006
