Title :
New Dielectrics for Gate Oxides and Surface Passivation on GaN
Author :
Gila, B.P. ; Thaler, G.T. ; Onstine, A.H. ; Hlad, M. ; Gerger, A. ; Herrero, A. ; Allums, K.K. ; Stodilka, D. ; Jang, S. ; Kang, B. ; Anderson, T. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Author_Institution :
Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL
Abstract :
In this paper, the authors report the nitride surface preparation and growth of these crystalline oxide dielectrics, efforts to improve the oxide/nitride interface properties by reducing the lattice mismatch and accelerated aging effects for these dielectrics on the nitride semiconductors. The authors review progress in obtaining low interface state densities and reducing current collapse with these dielectrics on GaN and examine the thermal stability and compatibility with processing schemes for HEMTs
Keywords :
III-V semiconductors; dielectric materials; gallium compounds; high electron mobility transistors; passivation; surface treatment; thermal stability; GaN; crystalline oxide dielectrics; gate oxides; low interface state densities; nitride semiconductors; nitride surface growth; nitride surface preparation; surface passivation; Accelerated aging; Crystallization; Dielectrics; Gallium nitride; HEMTs; Interface states; Lattices; MODFETs; Passivation; Thermal stability;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596014
