DocumentCode :
3283387
Title :
Electrical characteristics of epitaxial /spl gamma/-Al/sub 2/O/sub 3/ films for quantum tunneling device
fYear :
2005
fDate :
7-9 Dec. 2005
Firstpage :
136
Lastpage :
137
Abstract :
In this study, we report the electrical characteristics with tunneling phenomena and surface topography properties of ultrathin epitaxial gamma-Al2O3 films in 2-10nm range. Epitaxial gamma-Al2O3 films were fabricated on the n-type Si (111) substrates by mixed source MBE method, aluminum as a solid source and N2O as a gas source. Details of Al2 O3 fabrication process are described in previous report [Jung, 1999]
Keywords :
alumina; molecular beam epitaxial growth; nitrogen compounds; resonant tunnelling diodes; silicon; surface topography; thin films; Al2O3; MBE method; N2O; electrical characteristics; epitaxial films; quantum tunneling device; surface topography properties; tunneling phenomena properties; Crystallization; Dielectrics and electrical insulation; Electric breakdown; Electric variables; Leakage current; Molecular beam epitaxial growth; Semiconductor films; Substrates; Surface topography; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596017
Filename :
1596017
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3283387
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