DocumentCode :
3283399
Title :
Degradation of Hexagonal Silicon Carbide-based Bipolar Devices
Author :
Skowronski, M.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
138
Lastpage :
138
Keywords :
Commercialization; Degradation; Displays; Impedance; Materials science and technology; P-n junctions; Physics; Silicon carbide; Stacking; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596018
Filename :
1596018
Link To Document :
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