DocumentCode :
3283412
Title :
Structural and Analytical Studies of 4H Silicon Carbide MOSFETs with Thermally Grown Oxides
Author :
Zheleva, Tsvetanka ; Levin, Igor ; Habersat, Dan ; Lelis, Aivars ; Dautrich, Morgen ; Lenahan, Patrick
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
139
Lastpage :
140
Keywords :
Chemicals; Electrons; Laboratories; MOSFETs; Materials science and technology; Milling machines; NIST; Powders; Silicon carbide; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596019
Filename :
1596019
Link To Document :
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