Title :
Impact of Surface Steps on the Roughness Mobility in 4H-SiC
Author :
Pennington, Gary ; Potbhare, Siddharth ; Goldsman, Neil ; McGarrity, James M. ; Lelis, Aivars
Author_Institution :
Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD
Abstract :
In this work, the step distributions are used to generate surface morphologies via Monte Carlo methods. Steps propagate along the [112macr0] direction. In addition to the stepped surface, a random surface roughness is added along both the [112macr0] (perpendicular to steps) and [11macr00] (parallel to steps) directions. The rms height Delta=0.38nm and correlation length L=2.2nm of the random contribution correspond to typical values in Si scaled to account for the unit cell dimensions of SiC
Keywords :
Monte Carlo methods; silicon compounds; surface morphology; surface roughness; wide band gap semiconductors; 0.38 nm; 2.2 nm; Monte Carlo methods; SiC; roughness mobility; surface morphologies; surface roughness; surface steps; Anisotropic magnetoresistance; Degradation; Ion implantation; Military computing; Power engineering computing; Rough surfaces; Silicon carbide; Surface morphology; Surface roughness; Temperature;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596021
