Title :
Ultra-low-power HEMT and HBT devices and circuit demonstrations
Author :
Lange, M.D. ; Cavus, A. ; Tsai, R.S. ; Monier, C. ; Deal, W.R. ; Chan, B. ; Cox, A.C. ; Pascua, D.G. ; Sandhu, R.S. ; Hsing, R. ; Poust, B.D. ; Kraus, J.L. ; Nam, P.S. ; Lee, L.J. ; Li, D. ; Gutierrez-Aitken, A.L. ; Noori, A.M. ; Hayashi, S.L. ; Goorsky,
Author_Institution :
Northrop Grumman Space Technol., Redondo Beach, CA
Abstract :
During the past four years, the Defense Advanced Research Project Agency (DARPA) through its antimonide-based compound semiconductor (ABCS) program has sponsored development of high-electron-mobility transistor (HEMT) and heterojunction bipolar transistor (HBT) devices and circuits based on narrow-band-gap materials such as InAs or Inx Ga1-xAs with high In composition (x). These development efforts have sought to exploit the very high electron mobility and peak electron velocity of InAs for high speed circuit applications requiring very low power dissipation. At Northrop Grumman Space Technology (NGST), InAs/AlSb HEMT and In0.86Ga0.14As/In0.86Al0.14 As HBT devices have successfully been developed, and ultra-low-power circuits have successfully been demonstrated for both of these device technologies
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; narrow band gap semiconductors; power HEMT; power bipolar transistors; In0.86Ga0.14As-In0.86Al0.14 As; InAs-AlSb; heterojunction bipolar transistor; high speed circuit; high-electron-mobility transistor; narrow-band-gap materials; peak electron velocity; power dissipation; ultra-low-power HBT devices; ultra-low-power HEMT devices; ultra-low-power circuits; Circuits; Electron mobility; HEMTs; Heterojunction bipolar transistors; MMICs; Molecular beam epitaxial growth; Noise figure; Power dissipation; Semiconductor materials; Space technology;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596022
