DocumentCode
3283499
Title
High Mobility Strained Ge MOSFETs with high-k gate dielectric on Si
Author
Donnelly, Joseph P. ; Kelly, David Q. ; Joshi, Sachin ; Dey, Sagnik ; Shahrjerdi, Davood ; Wiedeman, Issac ; Ahmad, Doreen ; Banerjee, Sanjay K.
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
150
Lastpage
150
Keywords
Buffer layers; Chemical vapor deposition; Dielectric substrates; Germanium; Lead compounds; MOSFETs; Photonic band gap; Semiconductor films; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596025
Filename
1596025
Link To Document