مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

3283602

Title :

1.5 kV Power AlGaN/GaN HFETs

Author :

Simin, G. ; Tipirneni, N. ; Rai, S. ; Koudymov, A. ; Adivarahan, V. ; Yang, J. ; Khan, M.Asif

fYear :

2005

fDate :

Dec. 7-9, 2005

Firstpage :

164

Lastpage :

165

Keywords :

Aluminum gallium nitride; Breakdown voltage; Electric breakdown; FETs; Gallium nitride; HEMTs; MODFETs; Power electronics; Silicon carbide; Substrates;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Semiconductor Device Research Symposium, 2005 International

Print_ISBN :

1-4244-0083-X

Type :

conf

DOI :

10.1109/ISDRS.2005.1596033

Filename :

1596033

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3283602