DocumentCode
3283602
Title
1.5 kV Power AlGaN/GaN HFETs
Author
Simin, G. ; Tipirneni, N. ; Rai, S. ; Koudymov, A. ; Adivarahan, V. ; Yang, J. ; Khan, M.Asif
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
164
Lastpage
165
Keywords
Aluminum gallium nitride; Breakdown voltage; Electric breakdown; FETs; Gallium nitride; HEMTs; MODFETs; Power electronics; Silicon carbide; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596033
Filename
1596033
Link To Document