Title :
A novel bulk micromachined tunneling gyroscope
Author :
Wang, Lingyun ; Su, Yuanzhe ; Lei, Yi ; Li, Wenwang ; Liu, Yifang ; Sun, Daoheng
Author_Institution :
Dept. of Mech. & Electr. Eng., Xiamen Univ., Xiamen, China
Abstract :
A bulk micromachined vibratory tunneling gyroscope, which employs the high displacement sensitivity of quantum tunneling to obtain the desired resolution and is fabricated with silicon-glass wafer bonding and DRIE (Deep Reactive Ion Etching), has been developed. The device structure consists of a proof mass which can oscillate due to electrostatic comb driving and an out-of-plane silicon frame linked up to substrate by suspended springs. Because of adopting the silicon frame structure to get larger proof mass and putting tunneling tip at the end of silicon frame to obtain remarkable deformation induced by Coriolis force, the new ultracompact devices can provide extremely high sensitivity and wide dynamic range. Based on the modal analysis of gyroscope by FEM method, the structure dimensions are optimized according to resonant frequency matching of driving mode and detection mode. Simulation results demonstrate that the gyroscope owns the sensitivity of 0.7 Å(°/sec) at atmospheric pressure. The deep dry silicon on glass (DDSOG) process has been successfully used to fabricate this bulk tunneling gyroscope. The tunneling current is observed at deflection voltage 45.7V. The exponential relationship between tunneling current and square deflection voltage verifies the tunneling effect mechanism between the tip and the detected electrode.
Keywords :
Coriolis force; finite element analysis; gyroscopes; micromachining; modal analysis; springs (mechanical); sputter etching; tunnelling; Coriolis force; DRIE; FEM method; bulk micromachined tunneling gyroscope; deep dry silicon on glass process; deep reactive ion etching; electrostatic comb driving; modal analysis; proof mass; quantum tunneling; silicon glass wafer bonding; square deflection voltage; suspended springs; tunneling current; tunneling effect; tunneling tip; vibratory tunneling gyroscope; voltage 45.7 V; Electrodes; Glass; Gyroscopes; Resonant frequency; Sensors; Silicon; Tunneling; DDSOG; Gyroscope; Tunneling effect; Tunneling sensor;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-775-7
DOI :
10.1109/NEMS.2011.6017492