DocumentCode
3283761
Title
The characteristics of glass deep dry etching process with a single PR mask
Author
Park, Tag Gyu ; Min, Junggi ; Han, Dong-Chul ; Oh, Yeongtaek ; Seo, Wonjin
Author_Institution
Korea Bio-IT Foundry Seoul Center, Seoul Nat. Univ., Seoul, South Korea
fYear
2011
fDate
20-23 Feb. 2011
Firstpage
885
Lastpage
888
Abstract
The processes of fabricating the etch mask for a glass dry etching are complicated and require high cost. To reduce these disadvantages, we suggest a novel glass dry etching method using a single photoresist mask. In this work, we figured out the optimized condition for the glass dry etching using a photoresist without any metal or silicon mask. We observed the characteristics of quartz wafer, such as the etch profile, etch rate, the selectivity and the critical dimension loss rate.
Keywords
etching; glass; masks; photoresists; critical dimension loss rate; etch mask fabrication process; glass deep dry etching process; quartz wafer; single PR mask; single photoresist mask; Dry etching; Fabrication; Glass; Resists; Silicon; Substrates; Glass deep reactive ion etching; etch rate; phtoresist;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
Conference_Location
Kaohsiung
Print_ISBN
978-1-61284-775-7
Type
conf
DOI
10.1109/NEMS.2011.6017495
Filename
6017495
Link To Document