• DocumentCode
    3283761
  • Title

    The characteristics of glass deep dry etching process with a single PR mask

  • Author

    Park, Tag Gyu ; Min, Junggi ; Han, Dong-Chul ; Oh, Yeongtaek ; Seo, Wonjin

  • Author_Institution
    Korea Bio-IT Foundry Seoul Center, Seoul Nat. Univ., Seoul, South Korea
  • fYear
    2011
  • fDate
    20-23 Feb. 2011
  • Firstpage
    885
  • Lastpage
    888
  • Abstract
    The processes of fabricating the etch mask for a glass dry etching are complicated and require high cost. To reduce these disadvantages, we suggest a novel glass dry etching method using a single photoresist mask. In this work, we figured out the optimized condition for the glass dry etching using a photoresist without any metal or silicon mask. We observed the characteristics of quartz wafer, such as the etch profile, etch rate, the selectivity and the critical dimension loss rate.
  • Keywords
    etching; glass; masks; photoresists; critical dimension loss rate; etch mask fabrication process; glass deep dry etching process; quartz wafer; single PR mask; single photoresist mask; Dry etching; Fabrication; Glass; Resists; Silicon; Substrates; Glass deep reactive ion etching; etch rate; phtoresist;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-61284-775-7
  • Type

    conf

  • DOI
    10.1109/NEMS.2011.6017495
  • Filename
    6017495