Role of Low O/sub 2/ Pressure and Growth Temperature on Electrical Transport of PLD Grown ZnO Thin Films on Si Substrates

Author

Pandis, Ch. ; Brilis, N. ; Tsamakis, D. ; Ali, H. ; Krishnamoorthy, S. ; Iliadis, A.A.

Author_Institution

Sch. of Electr. Eng. & Comput. Sci. Nat. Tech., Athens Univ.

fYear

2005

fDate

7-9 Dec. 2005

Firstpage

191

Lastpage

192

Abstract

Recently there has been noticeable interest in the fabrication and study of ZnO films for a variety of electrical and optical devices. Reports indicate that the electrical properties of undoped ZnO thin films can be controlled by changing the growth parameters as stated in Ji Nan Zeng et al. (2002) such as: O₂ partial pressure during growth, deposition temperature as well as the fluence of the laser beam. The effects of very low oxygen pressure however have not been well investigated. In this work we have investigated the effect of very low oxygen pressure and deposition temperature during growth on electrical and structural characteristics of PLD grown ZnO films on Si

Keywords

II-VI semiconductors; elemental semiconductors; pulsed laser deposition; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; transport processes; zinc compounds; ZnO-Si; deposition temperature; electrical properties; electrical transport; growth parameters; optical devices; pulsed laser deposition; structural characteristics; thin films; Crystallization; Optical films; Optical pulses; Pulsed laser deposition; Semiconductor films; Semiconductor thin films; Sputtering; Temperature distribution; X-ray scattering; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2005 International

Conference_Location

Bethesda, MD

Print_ISBN

1-4244-0083-X

Type

conf

DOI

10.1109/ISDRS.2005.1596047

Filename

1596047