Title :
UV SiC avalanche photodetectors for photon counting
Author :
Soloviev, Stanislav ; Vert, Alexey ; Bolotnikov, Alexander ; Sandvik, Peter
Author_Institution :
Gen. Electr. Global Res. Center, Micro & Nanostruct. Technol., Niskayuna, NY, USA
Abstract :
At present, the best detector for photon-counting in the deep UV region of the spectrum is based on photoemissive detectors such as PMTs. However, its disadvantages are low quantum efficiency, sensitivity to magnetic field and high cost. In this work we investigate semiconductor alternatives to PMTs for use for photon counting in the deep UV. Silicon Carbide avalanche photodetectors with separate absorption and multiplication regions were fabricated and characterized. Effect of thicknesses of the multiplication and absorption layers on electrical and optical characteristics were analyzed.
Keywords :
avalanche photodiodes; photodetectors; photoemission; photon counting; silicon compounds; wide band gap semiconductors; PMT; SiC; absorption regions; avalanche photodetectors; electrical characteristics; multiplication regions; optical characteristics; photoemissive detectors; photon counting detector; Biomedical optical imaging; Costs; Dark current; Detectors; Electromagnetic wave absorption; Magnetic fields; Nanostructures; Photodetectors; Photonics; Silicon carbide;
Conference_Titel :
Sensors, 2009 IEEE
Conference_Location :
Christchurch
Print_ISBN :
978-1-4244-4548-6
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2009.5398378
