DocumentCode :
3283840
Title :
MgO nanowires synthesized at lower temperatures by metal organic chemical vapor deposition
Author :
Lai, Yunfeng
Author_Institution :
Inst. of Micro-Nano Devices & Solar Cells, Fuzhou Univ., Fuzhou, China
fYear :
2011
fDate :
20-23 Feb. 2011
Firstpage :
913
Lastpage :
918
Abstract :
MgO nanowires were synthesized on MgO(100) and Si(100) substrates by MOCVD with β-diketonate Mg(tmhd)2 (tmhd=2,2,6,6-tetramethyl-3,5-heptanedionate, with formula C11H19O2). Very thin gold layers (<;5nm) were sputtered onto Si(100) and MgO(100) substrates, followed by heating at high temperatures to form catalyst clusters. The alignment of MgO nanowires on MgO(100) substrates are mainly along [100] but they are in [100] and [110] alignments on Si(100) substrate. Whatever the substrates are, the growth direction of a single nanowire is normally in<;001>; direction. The synthesis temperature, injection period, catalyst starting thickness, oxygen partial pressure and injection mass/period have strong effects on the synthesis and dimensions of nanowires. It shows that the quantity matching between the two reactive species (magnesium and oxygen) is very important for the vertical growth of nanowires. The quantity mismatching between the reactive species is subject to branching structures or totally kills the vertical alignments to be random ones. The synthesized MgO nanowires are needle-shaped with a decreasing diameter from the base to tip, which is probably due to the lateral growth as well as the catalyst diffusion during the synthesis.
Keywords :
MOCVD; catalysts; magnesium compounds; nanowires; C11H19O2; MOCVD; MgO; MgO nanowire; Si; catalyst cluster; catalyst diffusion; heating; injection mass; injection period; magnesium; metal organic chemical vapor deposition; oxygen partial pressure; synthesis temperature; Gold; Heating; MOCVD; Magnesium; Nanowires; Substrates; CVD; MgO; VLS; nanowires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-775-7
Type :
conf
DOI :
10.1109/NEMS.2011.6017502
Filename :
6017502
Link To Document :
بازگشت