DocumentCode
3283841
Title
Emerging Reliability Issues of Nano-Scale SOI Technology
Author
Ioannou, Dimitris P. ; Mishra, Rahul ; Ioannou, Dimitris E.
Author_Institution
Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA
fYear
2005
fDate
7-9 Dec. 2005
Firstpage
199
Lastpage
200
Abstract
In this review, the following reliability concerns: hot carrier reliability, negative-bias temperature instability (NBTI), time depended dielectric breakdown (TDDB) and electrostatic discharge, are discussed individually, and recognizing that the responsible mechanisms quite often are active simultaneously, their interdependence and interaction is also discussed
Keywords
electric breakdown; electrostatic discharge; hot carriers; nanotechnology; reliability; silicon-on-insulator; electrostatic discharge; hot carrier reliability; nanoscale SOI technology; negative-bias temperature instability; silicon-on-insulator; time depended dielectric breakdown; CMOS technology; Circuits; Dielectrics; Electrostatic discharge; Hot carriers; MOSFETs; Power supplies; Silicon on insulator technology; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Conference_Location
Bethesda, MD
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596051
Filename
1596051
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